MC9S12G FREESCALE [Freescale Semiconductor, Inc], MC9S12G Datasheet - Page 917

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MC9S12G

Manufacturer Part Number
MC9S12G
Description
Ignores external trigger. Performs one conversion sequence and stops.
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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26.1.2.2
26.1.2.3
26.1.3
The block diagram of the Flash module is shown in
Freescale Semiconductor
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the EEPROM memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
4 Kbytes of EEPROM memory composed of one 4 Kbyte Flash block divided into 1024 sectors of
4 bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of EEPROM memory
Ability to program up to four words in a burst sequence
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
Block Diagram
EEPROM Features
Other Flash Module Features
MC9S12G Family Reference Manual, Rev.1.01
Figure
26-1.
128 KByte Flash Module (S12FTMRG128K1V1)
917

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