UPD70F3737GC-UEU-AX Renesas Electronics America, UPD70F3737GC-UEU-AX Datasheet - Page 766

• Manufacturer Part Number: UPD70F3737GC-UEU-AX
• Description: MCU 32BIT V850ES/JX3-L 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Lr

Specifications of UPD70F3737GC-UEU-AX

• Package / Case: *
• Voltage - Supply (vcc/vdd): 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 20MHz
• Number Of I /o: 84
• Core Processor: RISC
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Program Memory Size: 128KB (128K x 8)
• Data Converters: A/D 12x10b, D/A 2x8b
• Oscillator Type: Internal
• Peripherals: DMA, LVD, PWM, WDT
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Core Size: 32-Bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

28.4.5 Communication commands
from the dedicated flash programmer to the V850ES/JG3-L are called “commands”. The response signals sent from
the V850ES/JG3-L to the dedicated flash programmer are called “response commands”.
issued from the dedicated flash programmer, and the V850ES/JG3-L performs the processing corresponding to the
commands.
766
Blank check
Erase
Write
Verify
System setting,
control
Classification
The V850ES/JG3-L communicates with the dedicated flash programmer by means of commands. The signals sent
The following shows the commands for flash memory control in the V850ES/JG3-L. All of these commands are
Block blank check
command
Chip erase command
Block erase command
Program command
Verify command
Checksum command
Silicon signature
command
Security setting
command
Command Name
Dedicated flash programmer
Table 28-7. Flash Memory Control Commands
Figure 28-10. Communication Commands
Preliminary User’s Manual U18953EJ1V0UD
CSIB0,
CSIB3
CHAPTER 28 FLASH MEMORY
√
√
√
√
√
√
√
√
CSIB0 + HS,
CSIB3 + HS
Support
Response command
√
√
√
√
√
√
√
√
Command
UARTA0
√
√
√
√
√
√
√
√
V850ES/JG3-L
Checks if the contents of the memory in the
specified block have been correctly erased.
Erases the contents of the entire memory.
Erases the contents of the memory of the
specified block.
Writes the specified address range, and
executes a contents verify check.
Compares the contents of memory in the
specified address range with data
transferred from the flash programmer.
Reads the checksum in the specified
address range.
Reads silicon signature information.
Prohibits the chip erase command, block
erase command, program command, read
command, and boot area rewrite.
Function