EP4SE530H35C2N Altera, EP4SE530H35C2N Datasheet - Page 1132
EP4SE530H35C2N
Manufacturer Part Number
EP4SE530H35C2N
Description
IC STRATIX IV FPGA 530K 1152HBGA
Manufacturer
Altera
Series
STRATIX® IV Er
Datasheets
1.EP4SGX110DF29C3N.pdf
(80 pages)
2.EP4SGX110DF29C3N.pdf
(1154 pages)
3.EP4SGX110DF29C3N.pdf
(432 pages)
4.EP4SGX110DF29C3N.pdf
(22 pages)
5.EP4SGX110DF29C3N.pdf
(72 pages)
6.EP4SE230F29C3N.pdf
(12 pages)
Specifications of EP4SE530H35C2N
Number Of Logic Elements/cells
531200
Number Of Labs/clbs
21248
Total Ram Bits
27376
Number Of I /o
744
Voltage - Supply
0.87 V ~ 0.93 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
1152-HBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Gates
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EP4SE530H35C2N
Manufacturer:
ALTERA
Quantity:
147
- EP4SGX110DF29C3N PDF datasheet
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- EP4SE230F29C3N PDF datasheet #6
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1–50
Stratix IV Device Handbook Volume 4: Device Datasheet and Addendum
Configuration and JTAG Specifications
Table 1–37
Table 1–37. Configuration Mode Specifications for Stratix IV Devices—Preliminary
Table 1–38
Table 1–38. JTAG Timing Parameters and Values for Stratix IV Devices—Preliminary
Temperature Sensing Diode Specifications
Table 1–39
Table 1–39. External Temperature Sensing Diode Specifications—Preliminary
Passive serial
Fast passive parallel
Fast active serial
Remote update only in fast AS mode
Note to
(1) This denotes the maximum frequency supported in the FPP configuration scheme. The frequency supported for
t
t
t
t
t
t
t
t
t
Note to
(1) A 1 ns adder is required for each V
I
V
Series resistance
Diode ideality factor
JCP
JCH
JCL
JPSU (TDI)
JPSU (TMS)
JPH
JPCO
JPZX
JPXZ
bias
bias,
Symbol
, diode source current
each device may vary depending on device density. For more information, refer to the
Security, and Remote System Upgrades in Stratix IV Devices
I/O bank = 2.5 V, or 13 ns if it equals 1.8 V.
voltage across diode
Table
Table
lists the Stratix IV configuration mode specifications.
lists the JTAG timing parameters and values for Stratix IV devices.
lists the specifications for the Stratix IV temperature sensing diode.
1–37:
1–38:
Programming Mode
Description
TCK clock period
TCK clock high time
TCK clock low time
TDI JTAG port setup time
TMS JTAG port setup time
JTAG port hold time
JTAG port clock to output
JTAG port high impedance to valid output
JTAG port valid output to high impedance
(1)
CCIO
Description
voltage step down from 3.0 V. For example, t
Chapter 1: DC and Switching Characteristics for Stratix IV Devices
Min
0.3
—
—
8
Min
4.3
—
—
17
chapter.
DCLK F
Typ
—
—
—
—
Typ
5.3
—
—
26
Min
30
14
14
—
—
—
1
3
5
MAX
JPCO
April 2011 Altera Corporation
Configuration, Design
= 12 ns if V
11
14
14
1.030
Switching Characteristics
Max
Max
500
125
125
Max
0.9
< 5
40
10
—
—
—
—
—
—
(1)
(1)
(1)
CCIO
of the TDO
MHz
MHz
MHz
MHz
Unit
Unit
Unit
μA
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ω
V
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