upd70f3017ay Renesas Electronics Corporation., upd70f3017ay Datasheet - Page 414
upd70f3017ay
Manufacturer Part Number
upd70f3017ay
Description
V850/sa1tm 32-/16-bit Single-chip Microcontroller
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPD70F3017AY.pdf
(492 pages)
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16.7.2 Self-programming function
erasing/writing flash memory becomes possible.
414
The V850/SA1 provides self-programming functions, as shown below.
Note Data is deleted in area units (128 KB).
Erase
Write
Check
Write back
Acquire information
3FFFFH
00000H
Type
Normal operation mode
Flash memory
256 KB
Area erase
Continuous write in word units
Prewrite
Erase verify
Erase byte verify
Internal verify
Area write back
Flash memory information read
Figure 16-14. Outline of Self-Programming (2/2)
Function Name
FLPMC ← 02H
FLPMC ← 00H
(b)
CHAPTER 16 FLASH MEMORY
Table 16-8. Function List
User’s Manual U12768EJ4V1UD
µ
PD70F3017A, 70F3017AY
(delete/write routine
Self-programming
incorporated)
function
Erases the specified area.
Continuously writes the specified memory contents from
the specified flash memory address, for the number of
words specified in 4-byte units.
Writes 0 to flash memory before erasure.
Checks whether an overerase occurred after erasure.
Checks whether erasure is complete.
Checks whether the signal level of the post-write data in
flash memory is appropriate.
Writes back the flash memory area in which an
overerase occurred.
Reads out information about flash memory.
3FFFFH
00000H
Function
Self-programming mode
By combining these functions,
Flash memory
Erase area
Erase area
(128 KB)
(128 KB)
Note
Note
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