upd70f3017ay Renesas Electronics Corporation., upd70f3017ay Datasheet - Page 458

• Manufacturer Part Number: upd70f3017ay
• Description: V850/sa1tm 32-/16-bit Single-chip Microcontroller
• Manufacturer: Renesas Electronics Corporation.

Flash Memory Programming Mode
(
Write/erase characteristics (T
458
µ
V
V
V
Step erase time
Overall erase time per area
Write-back time
Number of write-backs per
write-back command
Number of erase/write-backs
Step writing time
Overall writing time per word
Number of rewrites per
area
PD70F3015B, 70F3015BY, 70F3017A, 70F3017AY only)
PP
DD
PP
Notes 1. The recommended setting value of the step erase time is 0.2 s.
supply voltage
supply current
supply current
Note 2
Parameter
2. No areas are included in the
3. The prewrite time prior to erasure and the erase verify time (write-back time) are not included.
4. The recommended setting value of the write-back time is 1 ms.
5. Write-back is executed once by the issuance of the write-back command. Therefore, the retry count
6. The recommended setting value of the step writing time is 20
7. 20
8. When writing initially to shipped products, it is counted as one rewrite for both “erase to write” and “write
The areas the
Area 0 = 000000H to 01FFFFH
Area 1 = 020000H to 03FFFFH
must be the maximum value minus the number of commands issued.
not included.
only”.
µ
s is added to the actual writing time per word. The internal verify time during and after the writing is
Note 2
µ
PD70F3017A and 70F3017AY are as follows.
A
V
I
I
t
t
t
C
C
t
t
C
DD
PP
ER
ERA
WB
WR
WRW
Symbol
PP2
WB
ERWB
ERWR
= 0 to 85°C, V
Shipped product → P → E → P → E → P: 3 rewrites
Shipped product → E → P → E → P → E → P: 3 rewrites
CHAPTER 17 ELECTRICAL SPECIFICATIONS
µ
During flash memory
programming
When V
MHz
V
Note 1
When step erase time = 0.2 s,
Note 3
Note 4
When write-back time = 1 ms,
Note 5
Note 6
When step writing time = 20
µ
Note 7
1 erase + 1 write after erase = 1
rewrite, Notes 8, 9
PD70F3015B and 70F3015BY.
s (1 word = 4 bytes),
PP
User’s Manual U12768EJ4V1UD
= V
DD
PP2
= AV
PP
Conditions
, 0.1 s after erasure
= V
DD
PP2
= BV
, f
XX
= 20
Example (P: Write, E: Erase)
DD
= 3.0 to 3.6 V, V
MIN.
µ
7.5
20
s.
SS
= AV
TYP.
100
7.8
0.2
20
20
1
SS
= BV
MAX.
SS
100
300
200
8.1
67
20
16
= 0 V)
Count/write-
Count/area
Count/area
command
µ
s/area
Count
s/word
back
Unit
mA
mA
ms
µ
V
s
s