upd70f3017ay Renesas Electronics Corporation., upd70f3017ay Datasheet - Page 423

• Manufacturer Part Number: upd70f3017ay
• Description: V850/sa1tm 32-/16-bit Single-chip Microcontroller
• Manufacturer: Renesas Electronics Corporation.

16.7.12 Flash programming mode control register (FLPMC)
to specify the self-programming mode.
FLPMC
The flash memory mode control register (FLPMC) is a register used to enable/disable writing to flash memory and
This register can be read/written in 8-bit or 1-bit units (the VPP bit (bit 2) is read-only).
Cautions 1. Be sure to transfer control to the internal RAM or external memory beforehand to
Remark
Bit Position
Note 18H/38H: When writing voltage is not applied to the V
3
2
1
7
0
2. Be sure to set bits 0 and 5 to 7 to 0 and bit 4 to 1.
Because the mask ROM versions (
703015AY, 703015B, 703015BY, 703017A, and 703017AY) do not have the FLPMC register, an
undefined value is read if an attempt is made to read the FLPMC register.
1CH/3CH: When writing voltage is applied to the V
manipulate the FLSPM bit.
programmer, the specification of FLSPM bit is ignored.
FLSPM
VPPDIS
VPP
6
Bit Name
0
5
0
V
Enables/disables writing/erasing on-chip flash memory. When this bit is 1,
writing/erasing on-chip flash memory is disabled even if a high voltage is applied to
the V
V
Indicates that the voltage applied to the V
level. This bit is used to check whether writing is possible or not in the self-
programming mode.
Flash Self Programming Mode
Controls switching between internal ROM and the self-programming interface. This
bit can switch the mode between the normal mode set by the mode pin on the
application system and the self-programming mode. The setting of this bit is valid
only if the voltage applied to the V
PP
PP
0: Enables writing/erasing flash memory
1: Disables writing/erasing flash memory
0: Indicates high-voltage application is not detected (the voltage has not reached
1: Indicates high-voltage application is detected (the voltage has reached the
0: Normal mode (for all addresses, instruction fetch is performed from on-chip
1: Self-programming mode (device internal processing is started.)
Disable
PP
1
4
the writing voltage enable level)
writing voltage enable level)
flash memory)
CHAPTER 16 FLASH MEMORY
pin.
User’s Manual U12768EJ4V1UD
VPPDIS
3
However, in on-board programming mode set by the flash
µ
PD703014A, 703014AY, 703014B, 703014BY, 703015A,
VPP
2
FLSPM
PP
PP
1
pin reaches the writing voltage enable level.
Function
pin
PP
PP
pin
pin has reached the writing-enabled
0
0
FFFFF8D4H
Address
18H/38H/1CH/3CH
After reset
Note
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