HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 836
HD64F2676VFC33
Manufacturer Part Number
HD64F2676VFC33
Description
IC H8S MCU FLASH 256K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2676VFC33
Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 19 Flash Memory (F-ZTAT Version)
19.5.3
EBR1 specifies the flash memory erase area block. EBR1 is initialized to H'00 when the SWE bit
in FLMCR1 is 0. Set only one bit in EBR1 and EBR2 together (do not set more than one bit at the
same time). Setting more than one bit will automatically clear all EBR1 and EBR2 bits to 0. For
details, see table 19.3, Erase Blocks.
Bit
7
6
5
4
3
2
1
0
Rev. 3.00 Mar 17, 2006 page 784 of 926
REJ09B0283-0300
Bit Name
EB7
EB6
EB5
EB4
EB3
EB2
EB1
EB0
Erase Block Register 1 (EBR1)
Initial Value
0
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Description
When this bit is set to 1, 4 kbytes of EB7 are to be
erased.
When this bit is set to 1, 4 kbytes of EB6 are to be
erased.
When this bit is set to 1, 4 kbytes of EB5 are to be
erased.
When this bit is set to 1, 4 kbytes of EB4 are to be
erased.
When this bit is set to 1, 4 kbytes of EB3 is to be
erased.
When this bit is set to 1, 4 kbytes of EB2 is to be
erased.
When this bit is set to 1, 4 kbytes of EB1 is to be
erased.
When this bit is set to 1, 4 kbytes of EB0 is to be
erased.
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