HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 855

• Manufacturer Part Number: HD64F2676VFC33
• Description: IC H8S MCU FLASH 256K 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2676VFC33

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

5. Do not apply a constant high level to the FWE pin.
6. Use the recommended algorithm when programming and erasing flash memory.
7. Do not set or clear the SWE bit during execution of a program in flash memory.
8. Do not use interrupts while flash memory is being programmed or erased.
9. Do not perform additional programming. Erase the memory before reprogramming.
10. Before programming, check that the chip is correctly mounted in the PROM programmer.
11. Do not touch the socket adapter or chip during programming.
12. Apply the reset signal after the SWE, bit is cleared during its operation.
Apply a high level to the FWE pin only when programming or erasing flash memory. Also,
while a high level is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data
in flash memory.
When the SWE bit is set, data in flash memory can be rewritten. When the SWE bit is set to 1,
data in flash memory can be read only in program-verify/erase-verify mode. Access flash
memory only for verify operations (verification during programming/erasing). Also, do not
clear the SWE bit during programming, erasing, or verifying. Similarly, when using the RAM
emulation function, the SWE bit must be cleared before executing a program or reading data in
flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless
of whether the SWE bit is set or cleared.
All interrupt requests, including NMI, should be disabled during programming/erasing the
flash memory to give priority to program/erase operations.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, too, perform only one programming operation
on a 128-byte programming unit block. Programming should be carried out with the entire
programming unit block erased.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
The reset signal is applied at least 100 µs after the SWE bit has been cleared.
Section 19 Flash Memory (F-ZTAT Version)
Rev. 3.00 Mar 17, 2006 page 803 of 926
REJ09B0283-0300