ez80f91 ZiLOG Semiconductor, ez80f91 Datasheet - Page 353

• Manufacturer Part Number: ez80f91
• Description: Ez80 Acclaimplus!? Connectivity Assp Ez80f91 Assp
• Manufacturer: ZiLOG Semiconductor

Table 235. Flash Memory Electrical Characteristics and Timing
PS027001-0707
Table 234. POR and VBO Electrical Characteristics
Symbol
Flash Byte Read Cycle Time
Symbol
V
V
V
T
T
I
IS
VCC
POR_VBO
ANA
VBO_MIN
VBO
POR
HYST
POR_VBO
RAMP
POR and VBO Electrical Characteristics
Flash Memory Characteristics
Current Consumption Under Various Operating Conditions
Parameter
VBO Voltage Threshold
POR Voltage Threshold
POR/VBO Hysteresis
POR/VBO analog RESET duration
VBO pulse reject period
POR/VBO DC current consumption
POR/VBO DC sleepmode current
consumption
V
guarantee proper RESET occurs
CC
Table 234
the eZ80F91 device.
Table 235
programming and erase timing information, see
Figure 65
versus Vdd while operating at 25 ºC, with zero Wait states, and with either a 10 MHz,
20 MHz, or 50 MHz system clock.
ramp rate requirements to
on page 346 illustrates the typical current consumption of the eZ80F91 device
on page 345 lists the Power-On Reset and Voltage Brownout characteristics of
lists the Flash memory characteristics of the eZ80F91 device. For Flash
Minimum
78
T
V
A
DD
= –40 ºC to 105 ºC
= 3.0 V to 3.6 V;
Typical
Minimum
—
2.45
2.55
0.1
30
40
T
A
= –40 ºC to 105 ºC
Maximum
2.65
2.75
Typ
100
120
10
40
Flash Memory
—
Maximum
2.90
2.95
120
100
150
100
50
Units
ns
on page 97.
Product Specification
V/ms
Unit Conditions
mV
μA
μA
μs
μs
Electrical Characteristics
V
V
Notes
eZ80F91 ASSP
V
V
VBO_OFF=0
(VBO enabled)
CC
CC
= V
= V
VBO
POR
345