S9S12HY64J0MLL Freescale Semiconductor, S9S12HY64J0MLL Datasheet - Page 564

• Manufacturer Part Number: S9S12HY64J0MLL
• Description: MCU 64K FLASH AUTO 100-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of S9S12HY64J0MLL

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
• Peripherals: LCD, Motor control PWM, POR, PWM, WDT
• Number Of I /o: 80
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 100-LQFP
• Controller Family/series: S12
• No. Of I/o's: 80
• Ram Memory Size: 4KB
• Cpu Speed: 64MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• Processor Series: S12HY
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: DEMO9S12HY64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte or word
accessed will be corrected.
16.1.1
Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store for data.
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field.
16.1.2
16.1.2.1
Freescale Semiconductor
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48 Kbytes of P-Flash memory composed of one 48 Kbyte Flash block divided into 96 sectors of
512 bytes
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the D-Flash memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
Glossary
Features
P-Flash Features
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