S9S12HY64J0MLL Freescale Semiconductor, S9S12HY64J0MLL Datasheet - Page 614

• Manufacturer Part Number: S9S12HY64J0MLL
• Description: MCU 64K FLASH AUTO 100-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of S9S12HY64J0MLL

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
• Peripherals: LCD, Motor control PWM, POR, PWM, WDT
• Number Of I /o: 80
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 100-LQFP
• Controller Family/series: S12
• No. Of I/o's: 80
• Ram Memory Size: 4KB
• Cpu Speed: 64MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• Processor Series: S12HY
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: DEMO9S12HY64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The Flash memory may be read as bytes, aligned words, or misaligned words. Read access time is one bus
cycle for bytes and aligned words, and two bus cycles for misaligned words. For Flash memory, an erased
bit reads 1 and a programmed bit reads 0.
It is possible to read from P-Flash memory while some commands are executing on D-Flash memory. It
is not possible to read from D-Flash memory while a command is executing on P-Flash memory.
Simultaneous P-Flash and D-Flash operations are discussed in
Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte or word
accessed will be corrected.
17.1.1
Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store for data.
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field.
Freescale Semiconductor
Glossary
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
CAUTION
Section
17.4.4.
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