mc9s12vr48 Freescale Semiconductor, Inc, mc9s12vr48 Datasheet - Page 458

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mc9s12vr48

Manufacturer Part Number
mc9s12vr48
Description
S12 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
EEPROM Sector — The EEPROM sector is the smallest portion of the EEPROM memory that can be
erased. The EEPROM sector consists of 4 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Version
ID, and the Program Once field.
17.1.2
17.1.2.1
17.1.2.2
Freescale Semiconductor
64 Kbytes of P-Flash memory composed of one 64 Kbyte Flash block divided into 128 sectors of
512 bytes
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the EEPROM memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
512 bytes of EEPROM memory composed of one 512 byte Flash block divided into 128 sectors of
4 bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of EEPROM memory
Ability to program up to four words in a burst sequence
Features
P-Flash Features
EEPROM Features
MC9S12VR Family Reference Manual, Rev. 2.2
Preliminary - Subject to Change Without Notice
458

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