EP3C25F324I7 Altera, EP3C25F324I7 Datasheet - Page 154

• Manufacturer Part Number: EP3C25F324I7
• Description: IC CYCLONE III FPGA 25K 324 FBGA
• Manufacturer: Altera
• Series: Cyclone® IIIr

Specifications of EP3C25F324I7

• Number Of Logic Elements/cells: 24624
• Number Of Labs/clbs: 1539
• Total Ram Bits: 608256
• Number Of I /o: 215
• Voltage - Supply: 1.15 V ~ 1.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 324-FBGA
• Family Name: Cyclone III
• Number Of Logic Blocks/elements: 24624
• # I/os (max): 215
• Frequency (max): 437.5MHz
• Process Technology: 65nm
• Operating Supply Voltage (typ): 1.2V
• Logic Cells: 24624
• Ram Bits: 608256
• Operating Supply Voltage (min): 1.15V
• Operating Supply Voltage (max): 1.25V
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 324
• Package Type: FBGA
• For Use With: 544-2370 - KIT STARTER CYCLONE III EP3C25
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Number Of Gates: -
• Lead Free Status / Rohs Status: Not Compliant

8–10
Address and Control/Command Pins
Memory Clock Pins
Cyclone III Device Family Memory Interfaces Features
DDR Input Registers
Cyclone III Device Handbook, Volume 1
1
1
Some DDR2 SDRAM and DDR SDRAM devices support error correction coding
(ECC), a method of detecting and automatically correcting errors in data
transmission. In 72-bit DDR2 or DDR SDRAM, there are eight ECC pins and 64 data
pins. Connect the DDR2 and DDR SDRAM ECC pins to a separate DQS or DQ group
in Cyclone III device family. The memory controller needs additional logic to encode
and decode the ECC data.
The address signals and the control or command signals are typically sent at a single
data rate. You can use any of the user I/O pins on all I/O banks of Cyclone III device
family to generate the address and control or command signals to the memory device.
Cyclone III device family does not support QDR II SRAM in the burst length of two.
In DDR2 and DDR SDRAM memory interfaces, the memory clock signals (CK and
CK#) are used to capture the address signals and the control or command signals.
Similarly, QDR II SRAM devices use the write clocks (K and K#) to capture the
address and command signals. The CK/CK# and K/K# signals are generated to
resemble the write-data strobe using the DDIO registers in Cyclone III device family.
CK/CK# pins must be placed on differential I/O pins and cannot be placed on the
same row or column as the DQ pins.
This section describes Cyclone III device family memory interfaces, including DDR
input registers, DDR output registers, OCT, and phase-lock loops (PLLs).
The DDR input registers are implemented with three internal logic element (LE)
registers for every DQ pin. These LE registers are located in the logic array block
(LAB) adjacent to the DDR input pin.
Chapter 8: External Memory Interfaces in the Cyclone III Device Family
Cyclone III Device Family Memory Interfaces Features
© January 2010 Altera Corporation