UPD70F3453GC-8EA-A Renesas Electronics America, UPD70F3453GC-8EA-A Datasheet - Page 1096

• Manufacturer Part Number: UPD70F3453GC-8EA-A
• Description: MCU 32BIT 128KB FLASH 100LQFP
• Manufacturer: Renesas Electronics America
• Series: V850E/Ix3r

Specifications of UPD70F3453GC-8EA-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 64MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 56
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Data Converters: A/D 10x12b, 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

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27.9 Rewriting by Self Programming
27.9.1 Overview
flash memory by itself. By using this interface and a self programming library that is used to rewrite the flash memory
with a user application program, the flash memory can be rewritten by a user application transferred in advance to the
internal RAM or external memory. Consequently, the user program can be upgraded and constant data
rewritten in the field. For details about self programming, see Flash Memory Self Programming Library User’s
Manual.
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The V850E/IF3 and V850E/IG3 support a flash macro service that allows the user program to rewrite the internal
Note Be sure not to allocate the program code to the block where the constant data of rewriting target is allocated.
See 27.2 Memory Configuration for the block configuration.
Figure 27-2. Concept of Self Programming
Flash function execution Flash information
Self programming library
CHAPTER 27 FLASH MEMORY
User’s Manual U18279EJ3V0UD
Flash macro service
Flash memory
Application program
Erase, write
Note
can be