DF2218BR24V Renesas Electronics America, DF2218BR24V Datasheet - Page 643

• Manufacturer Part Number: DF2218BR24V
• Description: IC H8S/2218 MCU FLASH 112-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2218BR24V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: SCI, SmartCard, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 6x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-LFBGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218-SS - KIT DEV H8S/2218 WINDOWS SIDESHW3DK2218 - DEV EVAL KIT H8S/2218
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

17.13
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
• Use the specified voltages and timing for programming and erasing.
• Powering on and off
• FWE application/disconnection
• Do not apply a constant high level to the FWE pin.
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with on-chip
flash memory (FZTAT128V3A, FZTAT64V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Do not apply a high level to the FWE pin until VCC has stabilized. Also, drive the FWE pin
low before turning off VCC. When applying or disconnecting VCC power, fix the FWE pin
low and place the flash memory in the hardware protection state. The power-on and power-off
timing requirements should also be satisfied in the event of a power failure and subsequent
recovery.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state. The following points
must be observed concerning FWE application and disconnection to prevent unintentional
programming or erasing of flash memory:
• Apply FWE when the VCC voltage has stabilized within its rated voltage range.
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of the
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits in
Apply a high level to the FWE pin only when programming or erasing flash memory. A system
configuration in which a high level is constantly applied to the FWE pin should be avoided.
Also, while a high level is applied to the FWE pin, the watchdog timer should be activated to
prevent overprogramming or overerasing due to program runaway, etc.
reset state. FWE input can also be switched during execution of a program in flash
memory.
FLMCR1 are cleared. Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits
are not set by mistake when applying or disconnecting FWE.
Flash Memory Programming and Erasing Precautions
Rev.7.00 Dec. 24, 2008 Page 587 of 698
REJ09B0074-0700