DF2218BR24V Renesas Electronics America, DF2218BR24V Datasheet - Page 644

• Manufacturer Part Number: DF2218BR24V
• Description: IC H8S/2218 MCU FLASH 112-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2218BR24V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: SCI, SmartCard, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 6x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-LFBGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218-SS - KIT DEV H8S/2218 WINDOWS SIDESHW3DK2218 - DEV EVAL KIT H8S/2218
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

• Use the recommended algorithm when programming and erasing flash memory.
• Do not set or clear the SWE1 bit during execution of a program in flash memory.
Note: * Refer to section 22.7, Flash Memory Characteristics.
• Do not use interrupts while flash memory is being programmed or erased.
• Do not perform additional programming. Erase the memory before reprogramming.
• Before programming, check that the chip is correctly mounted in the PROM programmer.
• Do not touch the socket adapter or chip during programming.
• The reset state must be entered after powering on
• When a reset is applied during operation, this should be done while the SWE1 pin is low.
Note: * Refer to section 22.7, Flash Memory Characteristics.
Rev.7.00 Dec. 24, 2008 Page 588 of 698
REJ09B0074-0700
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P1 or E1 bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Wait at least θ µs* after clearing the SWE1 bit before executing a program or reading data in
flash memory. When the SWE1 bit is set, data in flash memory can be rewritten, but access
flash memory only for verify operations (verification during programming/erasing). Also, do
not clear the SWE1 bit during programming, erasing, or verifying. Similarly, when using
emulation by RAM with a high level applied to the FWE pin, the SWE1 bit should be cleared
before executing a program or reading data in flash memory. However, read/write accesses can
be performed in the RAM area overlapping the flash memory space regardless of whether the
SWE1 bit is set or cleared.
All interrupt requests, including NMI, should be disabled during FWE application to give
priority to program/erase operations.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, too, perform only one programming operation
on a 128-byte programming unit block. Programming should be carried out with the entire
programming unit block erased.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
Apply the reset signal for at least 100 µs during the oscillation setting period.
Wait at least θ µs* after clearing the SWE1 bit before applying the reset.