MC68HC711P2CFN4 Freescale Semiconductor, MC68HC711P2CFN4 Datasheet - Page 69

no-image

MC68HC711P2CFN4

Manufacturer Part Number
MC68HC711P2CFN4
Description
IC MCU 32K OTP 4MHZ 84-PLCC
Manufacturer
Freescale Semiconductor
Series
HC11r
Datasheet

Specifications of MC68HC711P2CFN4

Core Processor
HC11
Core Size
8-Bit
Speed
4MHz
Connectivity
MI Bus, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
50
Program Memory Size
32KB (32K x 8)
Program Memory Type
OTP
Eeprom Size
640 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
84-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC68HC711P2CFN4
Manufacturer:
MOT
Quantity:
5 510
Part Number:
MC68HC711P2CFN4
Manufacturer:
HITACHI
Quantity:
5 510
Part Number:
MC68HC711P2CFN4
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC68HC711P2CFN4
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
3.6.2.3 EEPROM row erase
3.6.2.4 EEPROM byte erase
MC68HC11P2 — Rev 1.0
The following is an example of how to bulk erase the 512-byte EEPROM.
The CONFIG register is not affected in this example.
BULKE
The following example shows how to perform a fast erase of large
sections of EEPROM:
ROWE
The following is an example of how to erase a single byte of EEPROM:
BYTEE
6. Clear the PPROG register to reconfigure the EEPROM address
Freescale Semiconductor, Inc.
For More Information On This Product,
and data buses for normal operation.
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
Go to: www.freescale.com
#$02
$103B
$0D80
#$03
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
#$16
$103B
0,X
#$17
$103B
DLY10
$103B
EELAT=1
Set EELAT bit
Store data to any EEPROM address
EELAT=EEPGM=1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set to READ mode
ROW=ERASE=EELAT=1
Set to ROW erase mode
Write any data to any address in ROW
ROW=ERASE=EELAT=EEPGM=1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set to READ mode
BYTE=ERASE=EELAT=1
Set to BYTE erase mode
Write any data to address to be erased
BYTE=ERASE=EELAT=EEPGM=1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set to READ mode
EPROM, EEPROM and CONFIG register
Operating Modes and On-Chip Memory
Technical Data

Related parts for MC68HC711P2CFN4