n25q256 Numonyx, n25q256 Datasheet - Page 104

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n25q256

Manufacturer Part Number
n25q256
Description
256-mbit 3 V, Multiple I/o, 4-kbyte Subsector Erase, Xip Enabled, Serial Flash Memory With 108 Mhz Spi Bus Interface
Manufacturer
Numonyx
Datasheet

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Instructions
9.1.38
104/186
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must have been executed. After the write enable (WREN) instruction
has been decoded and executed, the device sets the write enable latch (WEL).
The Write Volatile Configuration register (WRVCR) instruction is entered by driving Chip
Select (S) Low, followed by the instruction code and the data byte on serial data input
(DQ0).
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Volatile Configuration register (WRVCR) instruction is not executed.
When the new data are latched, the write enable latch (WEL) is reset.
The Write Volatile Configuration register (WRVCR) instruction allows the user to change the
values of all the Volatile Configuration Register bits, described in
Configuration
The Write Volatile Configuration Register impacts the memory behavior right after the
instruction is received by the device.
Figure 54. Write Volatile Configuration Register instruction sequence
S
C
DQ0
DQ1
Register.
0
1
High Impedance
2
Instruction
3
4
5
6
7
MSB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
8
6
Volatile Configuration
9 10 11 12 13 14 15
5
Register In
4
3
2
1
0
©2010 Micron Technology, Inc. All rights reserved.
Table 6.: Volatile
N25Q256 - 3 V

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