SC2200 NSC [National Semiconductor], SC2200 Datasheet - Page 358

• Manufacturer Part Number: SC2200
• Description: Thin Client On a Chip
• Manufacturer: NSC [National Semiconductor]

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Electrical Specifications
1.
Notes:
1)
2)
3)
Symbol
T
AV
AV
V
V
V
V
V
V
V
V
C
BAT
IO
CORE
PLL2
PLL3
SB
SBL
CCCRT
CCUSB
CCCRT
For V
conditions refer to Section 8.2 "DC Characteristics" on page 364.
All power sources must be connected to the SC2200,
even if the function is not used
V
applied. V
rately. See Section 8.3.15 "Power-Up Sequencing" on
page 424.
The power planes of the SC2200 can be turned on or
off. For more information, see Section 5.2.9 "Power
Management Logic" on page 167.
SB
, V
1
IH
SBL
(Input High Voltage), V
Parameter
Operating case temperature
Analog power supply. Powers internal ana-
log circuits and some external signals (see
Table 8-3).
Battery supply voltage. Powers RTC and
ACPI when V
least 0.5V), and some external signals (see
Table 8-3).
I/O buffer power supply. Powers most of the
external signals (see Table 8-3); certain
signals within this power plane are 5V
tolerant.
Core processor and internal digital power supply. Powers internal digital logic, including internal frequency
multipliers.
233 or 266 MHz
300 MHz
PLL. Internal Phase Locked Loops (PLLs)
power supply.
Standby power supply. Powers RTC and
ACPI when V
and some external signals (see Table 8-3).
Standby logic. Powers internal logic needed to support Standby V
V
233 or 266 MHz
300 MHz
CRT DAC. Powers CRT DAC digital circuits.
233 or 266 MHz
300 MHz
SB
and V
SBL
and V
requires a 0.1 µF bypass capacitor to V
BAT
BAT
must be on if any other voltage is
BAT
SB
voltages can be applied sepa-
is greater than V
is greater than V
IL
(Continued)
(Input Low Voltage), I
Table 8-2. Operating Conditions
BAT
SB
-0.5V,
(by at
OH
358
SS
(Output High Current), and I
3.14
3.14
1.71
3.14
3.14
1.71
1.71
.
Min
2.4
1.9
1.9
1.9
0
4)
5)
It is recommended that the voltage difference between
V
to reduce leakage current. If the voltage difference
exceeds 0.25V, excessive leakage current is used in
gates that are connected on the boundary between
voltage domains.
It is recommended that the voltage difference between
V
leakage current. If the voltage difference exceeds
0.25V, excessive leakage current is used in gates that
are connected on the boundary between voltage
domains.
CCCRT
IO
Typ
3.3
3.0
3.3
1.8
2.0
3.3
3.3
1.8
2.0
1.8
2.0
and V
-
, V
CORE
SB
SB
Max
3.46
3.46
3.46
1.89
3.46
3.46
1.89
1.89
2.1
2.1
2.1
be less than 0.25V, in order to reduce
85
.
and V
OL
SBL
(Output Low Current) operating
Unit
o
V
V
V
V
V
V
V
V
C
be less than 0.25V, in order
Comments
Revision 3.0