H8S2110B RENESAS [Renesas Technology Corp], H8S2110B Datasheet - Page 470

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H8S2110B

Manufacturer Part Number
H8S2110B
Description
Renesas 16-Bit Single-Chip Microcomputer Renesas H8S Family/H8S/2100 Series
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
Section 17 ROM
4. Do not set/clear the SWE bit during program execution in the flash memory.
5. Do not use interrupts during flash memory programming/erasing
6. Do not perform additional programming. Programming must be performed in the erased state.
7. Ensure that the PROM programmer is correctly attached before programming.
8. Do not touch the socket adapter or LSI while programming.
Rev. 2.00 Mar 21, 2006 page 432 of 518
REJ09B0299-0200
Do not set/clear the SWE bit during program execution in the flash memory. An interval of at
least 100 s is necessary between program execution or data reading in flash memory and
SWE bit clearing. When the SWE bit is set to 1, flash memory data can be modified, however,
flash memory data can be read only in program-verify or erase-verify mode. Do not access the
flash memory for a purpose other than verification during programming/erasing. Do not clear
the SWE bit during programming, erasing, or verifying.
In order to give the highest priority to programming/erasing operation, disable all interrupts
including NMI input when the flash memory is programmed or erased.
Program the area with 128-byte programming-unit blocks in on-board programming or
programmer mode only once. Perform programming in the state where the programming-unit
block is fully erased.
If the socket, socket adapter, or product index does not match the specifications, too much
current flows and the product may be damaged.
Touching either of these can cause contact faults and write errors.

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