H8S2110B RENESAS [Renesas Technology Corp], H8S2110B Datasheet - Page 538

• Manufacturer Part Number: H8S2110B
• Description: Renesas 16-Bit Single-Chip Microcomputer Renesas H8S Family/H8S/2100 Series
• Manufacturer: RENESAS [Renesas Technology Corp]

Section 21 Electrical Characteristics
Erase
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 2.00 Mar 21, 2006 page 500 of 518
REJ09B0299-0200
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (t
5. The maximum number of writes (N) should be set according to the actual set value of
6. Maximum erase time (t
7. The maximum number of erases (N) should be set according to the actual set value of z
t
The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the
1
t
is set. It does not include the programming verification time.)
not include the erase verification time.)
+ wait time after P-bit setting (z2)
z1, z2 and z3 to allow programming within the maximum programming time (t
number of writes (n) as follows:
7
to allow erasing within the maximum erase time (t
P
E
(max)
(max) = Wait time after E-bit setting (z)
n
Wait time after
SWE-bit setting *
Wait time after
ESU-bit setting *
Wait time after
E-bit setting *
Wait time after
E-bit clear *
Wait time after
ESU-bit clear *
Wait time after
EV-bit setting *
Wait time after
dummy write *
Wait time after
EV-bit clear *
Wait time after
SWE-bit clear *
Maximum erase
count *
Item
n
6
1000
1
*
6
*
7
1
= (wait time after P-bit setting (z1) + (z3))
z1 = 30µs, z3 = 10µs
z2 = 200µs
1
1
*
1
1
1
6
1
1
1
E
Symbol Min
x
y
z
N
(max))
P
(max))
1
100
10
10
10
20
2
4
100
—
((N) – 6)
maximum erase count (N)
—
—
—
—
—
—
—
—
—
—
Typ
E
(max)).
Max
—
—
100
—
—
—
—
—
—
120
6
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
times
Test
Conditions
P
(max)).