HD6432670 Hitachi, HD6432670 Datasheet - Page 814

no-image

HD6432670

Manufacturer Part Number
HD6432670
Description
(HD64F267x Series) 16-Bit Microcomputer
Manufacturer
Hitachi
Datasheet
2. Reset the flash memory before turning on/off the power.
3. Powering on and off.
4. FWE application/disconnection.
The following points must be observed concerning FWE application and disconnection to prevent
unintentional programming or erasing of flash memory:
5. Do not apply a constant high level to the FWE pin.
6. Use the recommended algorithm when programming and erasing flash memory.
7. Do not set or clear the SWE bit during execution of a program in flash memory.
Rev. 2.0, 04/02, page 768 of 906
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter.
When applying or disconnecting Vcc power, fix the
in the hardware protection state. The power-on and power-off timing requirements should also
be satisfied in the event of a power failure and subsequent recovery.
Do not apply a high level to the FWE pin until V
before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery. The power-on and power-off timing in the H8S/2678
Series is shown in figure 19.12.
FWE application should be carried out when this LSI operation is in a stable condition. If this
LSI operation is not stable, fix the FWE pin low and set the protection state.
Apply FWE when the V
In boot mode, apply and disconnect FWE during a reset.
In user program mode, FWE can be switched between high and low level regardless of the
reset state. FWE input can also be switched during execution of a program in flash memory.
Do not apply FWE if program runaway has occurred.
Disconnect FWE only when the SWE, ESU, PSU, EV, PV, and E bits in FLMCR1 are cleared.
Apply a high level to the FWE pin only when programming or erasing flash memory. Also,
while a high level is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data
in flash memory.
CC
.
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin low
#$
pin low and place the flash memory

Related parts for HD6432670