DF2505BR26DV Renesas Electronics America, DF2505BR26DV Datasheet - Page 779

• Manufacturer Part Number: DF2505BR26DV
• Description: IC H8S/2505 MCU FLASH 176-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2500r

Specifications of DF2505BR26DV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 26MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

1. After the data to be programmed has fixed values, clear the RAMS bit to cancel the overlap of
2. Move the fixed programmed data in the overlap area in the RAM to the area to which the
3. Transfer the user-created programming/erasing-procedure program to the RAM.
4. Run the programming/erasing-procedure program on the RAM and download the on-chip
5. When the EB0 area of the user MAT has not been erased, the programming program must be
Note: Setting the RAMS bit to 1 puts all the blocks in the flash MAT into a program/erase-
RAM.
programming/erasing program created by the user is transferred and outside the area in which
on-chip programs are downloaded.
programming/erasing program.
downloaded after erasing. Set the parameters FMPAR and FMPDR in the data to be
programmed so that the tuned data that has been saved is designated, and execute
programming.
protected state regardless of the values of the RAM2 to RAM0 bits (emulation protection).
In this state, downloading of the on-chip programs is also disabled, so clear the RAMS bit
before actual programming or erasure.
Note:
H'7FFFF *
H'00000
H'01000
H'02000
H'03000
H'04000
H'05000
H'06000
H'07000
H'08000
The H8S/2551 and H8S/2505 flash memory user MATs are allocated address
H'00000 to H'5FFFF and divided into EB0 to EB13 erasure blocks.
Figure 20.19 Programming of the Data after Tuning
Flash memory
EB8 to EB15*
(user MAT)
EB0
EB1
EB2
EB3
EB4
EB5
EB6
EB7
(1) Cancel the emulation mode.
(2) Move tuned data from the operlap area to the
(3) Transfer the program/erase-procedure program.
(4) Download the on-chip programming/erasing
(5) Execute programming after erasing,
programs.
as necessary.
area with no programming/erasing data.
programming-procedure
Copy of the tuned data
Download area
On-chip RAM
Area for the
program
Rev. 6.00 Sep. 24, 2009 Page 731 of 928
H'FFC000
H'FFC800
H'FFD000
H'FFDFFF
H'FFEFBF
Section 20 Flash Memory
REJ09B0099-0600