DF2505BR26DV Renesas Electronics America, DF2505BR26DV Datasheet - Page 953

• Manufacturer Part Number: DF2505BR26DV
• Description: IC H8S/2505 MCU FLASH 176-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2500r

Specifications of DF2505BR26DV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 26MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

24.7
Table 24.13 shows the flash memory characteristics.
Table 24.13 Flash Memory Characteristics
Condition A
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 26 MHz, T
specifications)
Condition B
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 20 MHz, Ta = –40°C to +85°C (wide-range specifications)
Notes: 1. Programming/Erase time depends on the data.
Item
Programming time*
Erase time*
Programming time (total) *
Erase time (total) *
Programming/Erase time
(total) *
Count of reprogramming
Data hold time*
CC
CC
CC
CC
= P1V
= P1V
= 3.0 V to 5.5 V, V
= 3.0 V to 5.5 V, V
1
2. Programming/Erase time does not include the data transfer time.
3. The minimum times that all characteristics after reprogramming are guaranteed. (The
4. Data hold characteristics are when reprogramming is performed within the range of
5. The regular specifications are supported in the H8S/2506 Group only.
*
2
Flash Memory Characteristics
*
CC
CC
4
range between 1 and a minimum value is guaranteed.)
specifications including a minimum value.
1
= P2V
= P2V
*
3
a
4
= –20°C to +75°C (regular specifications)*
(for H8S/2552 Group, H8S/2506 Group):
(for H8S/2556 Group):
1
CC
CC
1
*
*
2
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
*
2
*
4
4
ref
ref
1
= 3.0 V to AV
= 3.0 V to AV
*
2
*
4
Symbo
l
t
t
∑
∑
∑
N
t
p
E
DRP
IP
IE
IPE
WEC
CC
CC
, V
, V
Min.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100*
10
SS
SS
= AV
= AV
3
Typ.
3
80
500
1000
7.5
10
7.5
10
15
20
⎯
⎯
SS
SS
= 0 V, φ= 32.768 kHz,
= 0 V, φ= 32.768 kHz,
5
, T
Max.
Rev. 6.00 Sep. 24, 2009 Page 905 of 928
30
800
5000
10000 ms/64 kbytes
22.5
30
22.5
30
45
60
⎯
⎯
a
= –40°C to +85°C (wide-range
Section 24 Electrical Characteristics
Unit
ms/128 bytes
ms/4 kbytes
ms/32 kbytes
s/384 kbytes
s/512 kbytes
s/384 kbytes
s/512 kbytes
s/384 kbytes
s/512 kbytes
Times
Year
REJ09B0099-0600
Test
Conditions
T
0
T
T
a
a
a
= 25°C, all
= 25°C
= 25°C