DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 170

IC H8S MCU FLASH 256K 120TQFP

DF2398TE20

Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2398TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6.5.6
Figure 6-15 shows the basic access timing for DRAM space. The basic DRAM access timing is 4 states. Unlike the basic
bus interface, the corresponding bits in ASTCR control only enabling or disabling of wait insertion, and do not affect the
number of access states. When the corresponding bit in ASTCR is cleared to 0, wait states cannot be inserted in the
DRAM access cycle.
The 4 states of the basic timing consist of one T
(column address output cycle) states, T
Rev.6.00 Oct.28.2004 page 140 of 1016
REJ09B0138-0600H
Basic Timing
Note: n = 2 to 5
Read
Write
CAS, LCAS
CSn, (RAS)
HWR, (WE)
HWR, (WE)
D
D
A
15
15
23
to D
to D
to A
ø
0
0
0
c1
and T
Figure 6-15 Basic Access Timing
c2
p
.
T
(precharge cycle) state, one T
p
Row
T
r
T
c1
r
(row address output cycle), and two T
Column
T
c2
c

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