DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 681

• Manufacturer Part Number: DF2398TE20
• Description: IC H8S MCU FLASH 256K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2398TE20; HD64F2398TE20

19.22.4 Memory Read Mode
Table 19-42 AC Characteristics in Memory Read Mode
Conditions: V
After the end of an auto-program, auto-erase, or status read operation, the command wait state is entered. To read
memory contents, a transition must be made to memory read mode by means of a command write before the read is
executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Item
A
Note: Data is latched at the rising edge of WE.
CC
18
to A
Data
= 5.0 V 10%, V
WE
OE
CE
Figure 19-55 Memory Read Mode Timing Waveforms after Command Write
0
SS
= 0 V, T
t
ces
Command write
t
f
t
t
t
t
t
t
t
t
Symbol
nxtc
ceh
ces
dh
ds
wep
r
f
a
t
wep
= 25 C 5 C
t
ds
H'00
t
dh
t
t
ceh
r
Min
20
0
0
50
50
70
—
—
t
nxtc
—
—
—
—
—
—
30
30
Max
Memory read mode
Address stable
Rev.6.00 Oct.28.2004 page 651 of 1016
Data
ns
ns
ns
ns
ns
ns
ns
Unit
s
REJ09B0138-0600H