DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 755

• Manufacturer Part Number: DF2398TE20
• Description: IC H8S MCU FLASH 256K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2398TE20; HD64F2398TE20

Notes: 1. Settings of each time must comply with algorithm of writing/erasing.
2. Writing time for 128 bytes: indicates the total period in which bit P of flash memory control register 1 (FLMCR1)
3. Erasing time for one block: indicates the period in which bit E of FLMCR1 is set. Erasing verification time is not
4. Maximum writing time: t
5. The maximum writing count (N) must be set to the maximum writing time (t
6. Wait time (z) after setting of bit E and the maximum erasing count (N) have the following relationship to the
is set. Writing verification time is not included.
included.
set value (z). Wait time (z) must be switched after setting of bit P according to writing count (n).
Writing count n
1
7
[In additional writing]
Writing count n
1
maximum erasing time (t
t
Item
Programming Wait time after SWE bit clear*
Erase
E
(max) = wait time (z) after setting of bit E maximum erasing count (N)
n
n
n
6
1000
6
Maximum programming
count*
Wait time after SWE bit
setting*
Wait time after ESU bit
setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H’FF dummy
write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
z = 30 s
z = 200 s
z = 10 s
1
1
*
1
1
4
P
E
(max) =
(max)).
wait time (z) after setting of bit P
1
*
6
1
1
1
*
1
1
1
1
6
Symbol Min
N
x
y
z
N
100
—
1
100
—
10
10
20
2
4
100
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
1000*
—
—
10
—
—
—
—
—
—
100
Rev.6.00 Oct.28.2004 page 725 of 1016
P
(max)) or less according the actual
5
Unit
Times
ms
Times
s
s
s
s
s
s
s
s
s
Test
Condition
Erase time
wait
REJ09B0138-0600H