DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 629

• Manufacturer Part Number: DF2398TE20
• Description: IC H8S MCU FLASH 256K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2398TE20; HD64F2398TE20

19.10.2 Software Protection
Software protection can be implemented by setting the SWE bit in FLMCR1, erase block registers 1 and 2 (EBR1, EBR2),
and the RAMS bit in RAMER. When software protection is in effect, setting the P or E bit in flash memory control
register 1 (FLMCR1) does not cause a transition to program mode or erase mode. (See table 19-17.)
Table 19-17 Software Protection
19.10.3 Error Protection
In error protection, an error is detected when MCU runaway occurs during flash memory programming/erasing, or
operation is not performed in accordance with the program/erase algorithm, and the program/erase operation is aborted.
Aborting the program/erase operation prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in FLMCR2 and the error
protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase
mode is aborted at the point at which the error occurred. Program mode or erase mode cannot be re-entered by re-setting
the P or E bit. However, PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
Error protection is released only by a reset and in hardware standby mode.
Figure 19-21 shows the flash memory state transition diagram.
When flash memory is read during programming/erasing (including a vector read or instruction fetch)
Immediately after exception handling (excluding a reset) during programming/erasing
When a SLEEP instruction (including software standby) is executed during programming/erasing
When the CPU loses the bus during programming/erasing
Item
SWE bit protection
Block specification
protection
Emulation protection
Description
Clearing the SWE bit to 0 in FLMCR1 sets
the program/erase-protected state for all
blocks.
(Execute in on-chip RAM or external
memory.)
Erase protection can be set for individual
blocks by settings in erase block registers
1 and 2 (EBR1, EBR2).
Setting EBR1 and EBR2 to H'00 places all
blocks in the erase-protected state.
Setting the RAMS bit to 1 in the RAM
emulation register (RAMER) places all
blocks in the program/erase-protected
state.
Rev.6.00 Oct.28.2004 page 599 of 1016
Program
Yes
—
Yes
Functions
Erase
Yes
Yes
Yes
REJ09B0138-0600H