DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 178

• Manufacturer Part Number: DF2398TE20
• Description: IC H8S MCU FLASH 256K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2398TE20; HD64F2398TE20

When the RCW bit is set to 1, RAS signal output is delayed by one cycle. The width of the RAS signal should be adjusted
with bits RLW1 and RLW0. These bits are only enabled in refresh operations.
Figure 6-26 shows the timing when the RCW bit is set to 1.
Self-Refreshing: A self-refresh mode (battery backup mode) is provided for DRAM as a kind of standby mode. In this
mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and RMODE bit in DRAMCR to 1. Then, when a SLEEP instruction is
executed to enter software standby mode, the CAS and RAS signals are output and DRAM enters self-refresh mode, as
shown in figure 6-27.
When software standby mode is exited, the RMODE bit is cleared to 0 and self-refresh mode is cleared.
When switching to software standby mode, if there is a CBR refresh request, CBR refreshing is executed before self-
refresh mode is entered.
Rev.6.00 Oct.28.2004 page 148 of 1016
REJ09B0138-0600H
CSn, (RAS)
CAS, LCAS
Figure 6-26 CBR Refresh Timing (When RCW = 1, RLW1 = 0, RLW0 = 1)
CAS, LCAS
Note: n = 2 to 5
CS, (RAS)
ø
Note: n = 2 to 5
ø
T
Rp
Figure 6-25 CBR Refresh Timing
T
Rp
T
Rr
T
Rr
T
Rc1
T
Rc1
T
Rw
T
Rc2
T
Rc2