MC9S08JM60CLH Freescale, MC9S08JM60CLH Datasheet - Page 54
MC9S08JM60CLH
Manufacturer Part Number
MC9S08JM60CLH
Description
Manufacturer
Freescale
Datasheet
1.MC9S08JM60CLH.pdf
(388 pages)
Specifications of MC9S08JM60CLH
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
24MHz
Interface Type
SCI/SPI
Total Internal Ram Size
4KB
# I/os (max)
51
Number Of Timers - General Purpose
8
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
On-chip Adc
12-chx12-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
64
Package Type
LQFP
Program Memory Type
Flash
Program Memory Size
60KB
Lead Free Status / RoHS Status
Compliant
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Chapter 4 Memory
4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
54
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
MC9S08JM60 Series Data Sheet, Rev. 3
Freescale Semiconductor
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