DEMO9S12XEP100 Freescale Semiconductor, DEMO9S12XEP100 Datasheet - Page 1142

• Manufacturer Part Number: DEMO9S12XEP100
• Description: BOARD DEMO FOR MC9S12XEP100
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of DEMO9S12XEP100

• Contents: Board, Cables, CD
• Processor To Be Evaluated: MC9S12XEP100
• Data Bus Width: 16 bit
• Interface Type: RS-232
• Silicon Manufacturer: Freescale
• Core Architecture: S12
• Core Sub-architecture: S12
• Silicon Core Number: MC9S12
• Silicon Family Name: S12XE
• Rohs Compliant: Yes
• For Use With/related Products: MC9S12XEP100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

29.1
The FTM1024K5 module implements the following:
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents or configure module
resources for emulated EEPROM operation. The user interface to the memory controller consists of the
indexed Flash Common Command Object (FCCOB) register which is written to with the command, global
address, data, and any required command parameters. The memory controller must complete the execution
of a command before the FCCOB register can be written to with a new command.
The RAM and Flash memory may be read as bytes, aligned words, or misaligned words. Read access time
is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words. For Flash memory,
an erased bit reads 1 and a programmed bit reads 0.
It is not possible to read from a Flash block while any command is executing on that specific Flash block.
It is possible to read from a Flash block while a command is executing on a different Flash block.
Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by phrase, only one single bit fault in the phrase containing the byte or word accessed will be corrected.
29.1.1
Buffer RAM — The buffer RAM constitutes the volatile memory store required for EEE. Memory space
in the buffer RAM not required for EEE can be partitioned to provide volatile memory space for
applications.
Freescale Semiconductor
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1024 Kbytes of P-Flash (Program Flash) memory, consisting of 5 physical Flash blocks, intended
primarily for nonvolatile code storage
32 Kbytes of D-Flash (Data Flash) memory, consisting of 1 physical Flash block, that can be used
as nonvolatile storage to support the built-in hardware scheme for emulated EEPROM, as basic
Flash memory primarily intended for nonvolatile data storage, or as a combination of both
4 Kbytes of buffer RAM, consisting of 1 physical RAM block, that can be used as emulated
EEPROM using a built-in hardware scheme, as basic RAM, or as a combination of both
Introduction
Glossary
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
MC9S12XE-Family Reference Manual , Rev. 1.23
CAUTION
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