SAM9XE512 Atmel Corporation, SAM9XE512 Datasheet - Page 104

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SAM9XE512

Manufacturer Part Number
SAM9XE512
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9XE512

Flash (kbytes)
512 Kbytes
Pin Count
217
Max. Operating Frequency
180 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
2
Uart
6
Ssc
1
Ethernet
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
Yes
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
312
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.65 to 1.95
Fpu
No
Mpu / Mmu
No / Yes
Timers
6
Output Compare Channels
6
Input Capture Channels
6
32khz Rtc
Yes
Calibrated Rc Oscillator
No
Memory Interface
4-28
The types of bursts are shown in Table 4-16.
All accesses in a burst are of the same width, direction, and protection type. For more
details, see Instruction interface addressing signals on page 4-4.
An example of a burst access is shown in Figure 4-11.
The DMORE signal is active during load and store multiple instructions and only ever
goes HIGH when DnMREQ is LOW. This signal effectively gives the same
information as DSEQ, but a cycle ahead. This information is provided to allow external
logic more time to decode sequential cycles.
Burst type
Word read
Word write
CLK
Address class
signals
DnMREQ
DSEQ
DMORE
WDATA[31:0]
(Write)
RDATA[31:0]
(Read)
Copyright © 2000 ARM Limited. All rights reserved.
Address increment
4 bytes
4 bytes
Address
N cycle
Figure 4-11 Sequential access cycles
Address + 4
Write data 1
data 1
Read
Cause
LDM instruction
STM instruction
S cycle
Table 4-16 Burst types
Write data 2
data 2
Read
ARM DDI 0165B

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