DF2166VT33WV Renesas Electronics America, DF2166VT33WV Datasheet - Page 187

• Manufacturer Part Number: DF2166VT33WV
• Description: MCU 16BIT FLASH 3V 512K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2166VT33WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

6.6
In this LSI, the external address space can be designated as the burst ROM space by the BRSTRM
bit in BCR, and the burst ROM interface enabled. Consecutive burst accesses of a maximum four
or eight words can be performed only during CPU instruction fetch. 1 or 2 states can be selected
for burst ROM access.
6.6.1
The number of access states in the initial cycle (full access) of the burst ROM interface is
determined by the AST bit in WSCR. When the AST bit is set to 1, wait states can be inserted. 1
or 2 states can be selected for burst access according to the setting of the BRSTS1 bit in BCR.
Wait states cannot be inserted in a burst cycle. Burst accesses of a maximum four words is
performed when the BRSTS0 bit in BCR is cleared to 0, and burst accesses of a maximum eight
words is performed when the BRSTS0 bit in BCR is set to 1.
The basic access timing for the burst ROM space is shown in figures 6.27 and 6.28.
Figure 6.27 Access Timing Example in Burst ROM Space (AST = BRSTS1 = 1)
Burst ROM Interface
Basic Operation Timing
Address bus
(IOSE = 0)
Data bus
AS/IOS
RD
φ
T
1
Full access
T
2
Read data
T
3
T
1
Only lower address changes
Read data
T
Burst access
2
Rev. 3.00, 03/04, page 145 of 830
T
1
Read data
T
2