DF2166VT33WV Renesas Electronics America, DF2166VT33WV Datasheet - Page 678

• Manufacturer Part Number: DF2166VT33WV
• Description: MCU 16BIT FLASH 3V 512K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2166VT33WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(4)
When flash memory is erased, the erase-block number on the user MAT must be passed to the
erasing program which is downloaded. This is set to the FEBS parameter (general register ER0).
One block is specified from the block number 0 to 15.
For details on the erasing processing procedure, see section 20.4.2, User Program Mode.
(a) Flash erase block select parameter (FEBS: general register ER0 of CPU)
This parameter specifies the erase-block number. The several block numbers cannot be specified.
Bit
31 to 8
7
6
5
4
3
2
1
0
Rev. 3.00, 03/04, page 636 of 830
Erasure Execution
Bit Name

EB7
EB6
EB5
EB4
EB3
EB2
EB1
EB0
Initial
Value









R/W

R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Description
Unused
These bits should be cleared to H′0.
Erase Block
Set the erase-block number in the range from 0 to 15. 0
corresponds to the EB0 block and 15 corresponds to the
EB15 block. The number other than 0 to 11, 0 to 13, and
0 to 15 should not be set in the H8S/2168, H8S/2167,
and H8S/2166, respectively.