DF2166VT33WV Renesas Electronics America, DF2166VT33WV Datasheet - Page 664

• Manufacturer Part Number: DF2166VT33WV
• Description: MCU 16BIT FLASH 3V 512K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2166VT33WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

• Flash Code Control Status Register (FCCS)
FCCS is configured by bits which request the monitor of the FWE pin state and error occurrence
during programming or erasing flash memory and the download of on-chip program.
Bit
7
6, 5
4
Rev. 3.00, 03/04, page 622 of 830
Bit Name
FWE

FLER
Initial
Value
1/0
All 0
0
R/W
R
R/W
R
Description
Flash Program Enable
Monitors the signal level input to the FWE pin and
enables or disables programming/erasing flash memory.
0: Programming/erasing disabled
1: Programming/erasing enabled
Reserved
The initial value should not be changed.
Flash Memory Error
Indicates an error occurs during programming and
erasing flash memory. When FLER is set to 1, flash
memory enters the error protection state.
When FLER is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to flash
memory, the reset must be released after the reset
period of 100 µs which is longer than normal.
0: Flash memory operates normally.
[Clearing condition]
•
1: An error occurs during programming/erasing flash
[Setting conditions]
•
•
•
•
Programming/erasing protection for flash memory
(error protection) is invalid.
memory.
Programming/erasing protection for flash memory
(error protection) is valid.
At a reset or in hardware standby mode
When an interrupt, such as NMI, occurs during
programming/erasing flash memory.
When the flash memory is read during
programming/erasing flash memory (including a
vector read or an instruction fetch).
When the SLEEP instruction is executed during
programming/erasing flash memory (including
software-standby mode)
When a bus master other than the CPU, such as the
DTC, gets bus mastership during
programming/erasing flash memory.