HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 821
HD64F2638F20J
Manufacturer Part Number
HD64F2638F20J
Description
IC H8S MCU FLASH 256K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2638F20J
Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SmartCard
Peripherals
Motor Control PWM, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
21A.9
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes for on-chip flash
memory are made by setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program
(user program) that controls flash memory programming/erasing should be located and executed in
on-chip RAM or external memory. If the program is to be located in external memory, the
instruction for writing to flash memory, and the following instruction, should be placed in on-chip
RAM. Also ensure that the DTC is not activated before or after execution of the flash memory
write instruction.
In the following operation descriptions, wait times after setting or clearing individual bits in
FLMCR1 are given as parameters; for details of the wait times, see section 24.1.7, Flash Memory
Characteristics.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
REJ09B0103-0800 Rev. 8.00
May 28, 2010
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming must be executed in the erased state. Do not perform additional
P bits in FLMCR1 is executed by a program in flash memory.
executed if FWE = 0).
programming on addresses that have already been programmed.
Flash Memory Programming/Erasing
Section 21A ROM
(H8S/2636 Group)
Page 771 of 1458
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