SAM3X8E Atmel Corporation, SAM3X8E Datasheet - Page 1416

• Manufacturer Part Number: SAM3X8E
• Manufacturer: Atmel Corporation

Table 45-33. Dynamic Performance Characteristics in Single ended and 12 bits mode
Note:
Table 45-34. Dynamic Performance Characteristics in Differential and 12 bits mode
Note:
1416
Parameter
Signal to Noise and Distortion - SINAD
ENOB
ENOB
Parameter
Signal to Noise Ratio - SNR
Signal to Noise Ratio - SNR
Total Harmonic Distortion - THD
Total Harmonic Distortion - THD
Signal to Noise and Distortion - SINAD
Signal to Noise and Distortion - SINAD
ENOB
ENOB
Track and Hold Time versus Source Output Impedance
1. ADC Clock (F
1. ADC Clock (F
SAM3X/A
[1kHz, 500kHz] – Nyquist conditions fulfilled.
500kHz] – Nyquist conditions fulfilled.
ADC
ADC
The following figure gives a simplified acquisition path.
Figure 45-14. Simplified Acquisition Path
) = 20MHz, Fs=1MHz, Fin = 127 kHz, IBCTL = 01, FFT using 1024 points or more, Frequency band =
)= 20MHz, Fs=1MHz, Fin=127kHz, IBCTL = 01, FFT using 1024 points or more, Frequency band = [1kHz,
Single Ended case:
Offset and Gain
definitions
Ymax=4095
YiM=2047
YaH
YaL
Conditions
Single ended, Other Cases
Single ended, DIFF=0, OFF=x, GAIN=10
Single ended, Other Cases
Conditions
Differential, DIFF=1, OFF=x, GAIN=10
Differential, Other Cases
Differential, DIFF=1, OFF=x, GAIN=10
Differential, Other Cases
Differential, DIFF=1, OFF=x, GAIN=10
Differential, Other Cases
Differential, DIFF=0, OFF=x, GAIN=10
Differential, Other Cases
0
Ya=actual adc codes
VL
XiL
ADVref/2
XiM=2047
XiH
VH
ADVref
Xmax=4095
(1)
Ya=Ga×Xi+Oe
Ga: actual gain
Ga=(YaH-YaL)/XiH
Ga=1+Ge(%)
Ge(%): gain error
Ge(lsb): Ge(%)×Xmax
10.4
Min
Min
9.2
-67
-69
9.8
9.5
57
61
59
60
59
Oe=actual offset
(1)
11.2
10.0
10.5
10.3
Typ
Typ
-83
-85
62
66
64
65
64
Vin
Xi=ideal adc codes
11057A–ATARM–17-Feb-12
Max
Max
11.5
11.3
73
68
12
11
73
67
67
-
-
Units
Units
Bits
Bits
Bits
Bits
dB
dB
dB
dB
dB
dB
dB