SAM3X8E Atmel Corporation, SAM3X8E Datasheet - Page 320

• Manufacturer Part Number: SAM3X8E
• Manufacturer: Atmel Corporation

20.2.5.3
20.2.5.4
320
320
SAM3X/A
SAM3X/A
Flash Full Erase Command
Flash Lock Commands
Table 20-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-9.
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated. A Bit Mask is pro-
vided as argument to the command. When bit 0 of the bit mask is set, then the first lock bit is
activated.
Likewise, the Clear Lock command (CLB) is used to clear lock bits.
Table 20-10. Set and Clear Lock Bit Command
Step
n+2
n+3
...
Step
1
2
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Handshake Sequence
Write handshaking
Write handshaking
Write Command (Continued)
Full Erase Command
MODE[3:0]
DATA
DATA
...
MODE[3:0]
CMDE
DATA
MODE[3:0]
CMDE
DATA
DATA[15:0]
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
DATA[15:0]
SLB or CLB
Bit Mask
11057A–ATARM–17-Feb-12
11057A–ATARM–17-Feb-12