SAM4S16C Atmel Corporation, SAM4S16C Datasheet - Page 346

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SAM4S16C

Manufacturer Part Number
SAM4S16C
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM4S16C

Flash (kbytes)
1024 Kbytes
Pin Count
100
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
79
Ext Interrupts
79
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
2
Uart
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
1000
Analog Comparators
1
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
6
Input Capture Channels
6
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Figure 19-6. Example of Partial Page Programming
19.4.3.3
346
346
X words
X words
X words
X words
SAM4S
SAM4S
Erase Commands
So Page Y erased
Erase All Flash
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
32-bit wide
Step 1.
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
Two errors can be detected in the EEFC_FSR register after a programming sequence:
By using the WP command, a page can be programmed in several steps if it has been erased
before (see
The Partial Programming mode works only with 128-bit (or higher) boundaries. It cannot be used
with boundaries lower than 128 bits (8, 16 or 32-bit for example).
Erase commands are allowed only on unlocked regions. Depending on the Flash memory, sev-
eral commands can be used to erase the Flash:
The erase sequence is:
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Lock Error: the page to be programmed belongs to a locked region. A command must be
• Flash Error: at the end of the programming, the WriteVerify test of the Flash memory has
• Erase all memory (EA): all memory is erased. The processor must not fetch code from the
• Erase pages (EPA): 4, 8, 16 or 32 pages are erased in the memory plane. The first page to
• Erase Sector (ES): A full memory sector is erased. Sector size depends on the Flash
• Erase starts as soon as one of the erase commands and the FARG field are written in the
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
previously run to unlock the corresponding region.
failed.
Flash memory.
be erased is specified in the FARG[15:2] field of the MC_FCR register. The first page number
must be modulo 4, 8,16 or 32 according to the number of pages to erase at the same time.
The processor must not fetch code from the Flash memory.
memory. FARG must be set with a page number that is in the sector to be erased. The
processor must not fetch code from the Flash memory.
Flash Command Register.
Figure 19-6
Programming of the second part of Page Y
below).
FF
FF
FF
CA FE
CA FE
CA FE
FF
FF
FF
FF
FF
FF
32-bit wide
FF
FF
FF
Step 2.
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
CA
CA
CA
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FE
FE
FE
Programming of the third part of Page Y
FF
FF
FF
CA FE
CA FE
CA FE
DE CA
DE CA
DE CA
FF
FF
FF
32-bit wide
FF
FF
FF
FF
FF
FF
Step 3.
...
...
...
...
FF
FF
FF
CA
CA
CA
11100A–ATARM–28-Oct-11
11100A–ATARM–28-Oct-11
DE CA
DE CA
DE CA
FF
FF
FF
FF
FF
FF
FE
FE
FE
FF
FF
FF

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