SAM4S16C Atmel Corporation, SAM4S16C Datasheet - Page 347

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SAM4S16C

Manufacturer Part Number
SAM4S16C
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM4S16C

Flash (kbytes)
1024 Kbytes
Pin Count
100
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
79
Ext Interrupts
79
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
2
Uart
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
1000
Analog Comparators
1
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
6
Input Capture Channels
6
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
19.4.3.4
11100A–ATARM–28-Oct-11
11100A–ATARM–28-Oct-11
Lock Bit Protection
Table 19-4.
Two errors can be detected in the EEFC_FSR register after a programming sequence:
Lock bits are associated with several pages in the embedded Flash memory plane. This defines
lock regions in the embedded Flash memory plane. They prevent writing/erasing protected
pages.
The lock sequence is:
One error can be detected in the EEFC_FSR register after a programming sequence:
It is possible to clear lock bits previously set. Then the locked region can be erased or pro-
grammed. The unlock sequence is:
• When the programming completes, the FRDY bit in the Flash Programming Status Register
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Lock Error: at least one page to be erased belongs to a locked region. The erase command
• Flash Error: at the end of the programming, the EraseVerify test of the Flash memory has
• The Set Lock command (SLB) and a page number to be protected are written in the Flash
• When the locking completes, the FRDY bit in the Flash Programming Status Register
• If the lock bit number is greater than the total number of lock bits, then the command has no
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash
• The Clear Lock command (CLB) and a page number to be unprotected are written in the
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
has been refused, no page has been erased. A command must be run previously to unlock
the corresponding region.
failed.
Command Register.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
effect. The result of the SLB command can be checked running a GLB (Get Lock Bit)
command.
memory has failed.
Flash Command Register.
FARG[1:0]
– For the EPA command, the 2 lowest bits of the FARG field define the number of
pages to be erased (FARG[1:0]):
0
1
2
3
FARG Field for EPA command:
Number of pages to be erased with EPA command
4 pages
8 pages
16 pages
32 pages
SAM4S
SAM4S
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347

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