SAM4S16C Atmel Corporation, SAM4S16C Datasheet - Page 351

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SAM4S16C

Manufacturer Part Number
SAM4S16C
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM4S16C

Flash (kbytes)
1024 Kbytes
Pin Count
100
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
79
Ext Interrupts
79
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
2
Uart
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
1000
Analog Comparators
1
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
6
Input Capture Channels
6
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
11100A–ATARM–28-Oct-11
11100A–ATARM–28-Oct-11
One error can be detected in the EEFC_FSR register after this sequence:
To write the User Signature, the sequence is:
Two errors can be detected in the EEFC_FSR register after this sequence:
To erase the User Signature, the sequence is:
Two errors can be detected in the EEFC_FSR register after this sequence:
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Write the full page, at any page address, within the internal memory area address space.
• Send the Write User Signature command (WUS) by writing the Flash Command Register
• When programming is completed, the FRDY bit in the Flash Programming Status Register
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Flash Error: at the end of the programming, the WriteVerify test of the Flash memory has
• Send the Erase User Signature command (EUS) by writing the Flash Command Register
• When programming is completed, the FRDY bit in the Flash Programming Status Register
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Flash Error: at the end of the programming, the EraseVerify test of the Flash memory has
with the WUS command.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the corresponding interrupt line of the NVIC is activated.
failed.
with the EUS command.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the corresponding interrupt line of the NVIC is activated.
failed.
SAM4S
SAM4S
351
351

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