MM912H634CV1AE Freescale Semiconductor, MM912H634CV1AE Datasheet - Page 21

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MM912H634CV1AE

Manufacturer Part Number
MM912H634CV1AE
Description
64KS12 LIN2xLS/HS Isense
Manufacturer
Freescale Semiconductor
Series
-r
Datasheet

Specifications of MM912H634CV1AE

Applications
Automotive
Core Processor
HCS12
Program Memory Type
FLASH (64 kB)
Controller Series
HCS12
Ram Size
6K x 8
Interface
LIN
Number Of I /o
-
Voltage - Supply
5.5 V ~ 27 V
Operating Temperature
-40°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
48-LQFP Exposed Pad
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
3.5.2
3.5.2.1
This section describes the characteristics of all I/O pins except EXTAL, XTAL, TEST and supply pins.
Freescale Semiconductor
Temperature represented by a ADC
Note:
VSENSE Input Divider Ratio (RATIO
5.5 V < V
VSENSE error - whole path (VSENSE pad to Digital value)
VS1SENSE Input Divider Ratio (RATIO
5.5 V < V
VS1SENSE error - whole path (VS1 pad to Digital value)
VSENSE Series Resistor
VSENSE Capacitor (optional)
Note:
Input high voltage
Input high voltage
Input low voltage
Input low voltage
Input hysteresis
Input leakage current (pins in high-impedance input mode)
V IN = V DDRX or V SSRX
Output high voltage (pins in output mode) I
Output low voltage (pins in output mode) I
Internal pull-up resistance (V
Internal pull-down resistance (V
Input capacitance
Injection current
Note:
22.
23.
24.
Single pin limit
Total device Limit, sum of all injected currents
Guaranteed by design and characterization.
The ESD behavior specified in
Refer to
SUP
SUP
< 27 V
< 27 V
Table 25. Static Electrical Characteristics - Supply Voltage Sense - VSENSE and VS1SENSE
Static Electrical Characteristics MCU Die
Section 3.8, “ESD Protection and Latch-up
(24)
I/O Characteristics
Table 24. Static Electrical Characteristics - Temperature Sensor - TSENSE
Table 26. 5.0 V I/O Characteristics for PTA, PTE, RESET and BKGD Pins
IH
(23)
min > input voltage > V
Ratings
IH
Ratings
min > input voltage > V
Ratings
IN
VSENSE
Voltage of 1.984 V
Section 3.8, “ESD Protection and Latch-up Immunity
VS1SENSE
OL
OH
= V
= +4.0 mA
= -4.0 mA
VSENSE
MM912_634 Advance Information, Rev. 4.0
= V
VS1SENSE
IL
max)
/ ADCIN)
(22)
IL
max)
Immunity”
/ ADCIN)
for more details.
Symbol
R
V
R
RATIO
RATIO
V
Er
V
I
I
V
V
V
V
C
I
HYS
PDH
ICS
ICP
PUL
Er
IN
OH
R
C
OL
Symbol
Symbol
IH
IH
IL
IL
in
T
VS1SENSE
VSENSE
VSENSE
1.984V
VSENSE
NSE
E
VSENS
VS1SE
V
0.65*V
V
DDRX
SSRX
is guaranteed without the optional capacitor.
Min
-1.0
-2.5
-25
25
25
-
-
-
-
-
Min
145
DDRX
- 0.3
– 0.8
Min
9.5
-
-
-
-
-
Typ
250
6.0
Typ
150
-
-
-
-
-
-
-
-
-
-
-
10.8
10.8
Typ
100
10
-
-
Electrical Characteristics
0.35*V
V
DDRX
Max
Max
155
0.3
1.0
0.8
2.5
50
50
25
5.0%
5.0%
X
Max
10.5
-
-
-
-
-
5.0
5.0
-
DDR
+
kOhm
Unit
Unit
mV
mA
Unit
A
k
k
pF
°C
V
V
V
V
V
V
nF
%
%
21

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