MM912H634CV1AE Freescale Semiconductor, MM912H634CV1AE Datasheet - Page 29

• Manufacturer Part Number: MM912H634CV1AE
• Description: 64KS12 LIN2xLS/HS Isense
• Manufacturer: Freescale Semiconductor
• Series: -r

Specifications of MM912H634CV1AE

• Applications: Automotive
• Core Processor: HCS12
• Program Memory Type: FLASH (64 kB)
• Controller Series: HCS12
• Ram Size: 6K x 8
• Interface: LIN
• Number Of I /o: -
• Voltage - Supply: 5.5 V ~ 27 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3.6.2.1.1.9
The typical time to erase a 512-byte P-Flash sector is given by:
The maximum time to erase a 512-byte P-Flash sector is given by:
3.6.2.1.1.10
The maximum time required to erase and unsecure the Flash is given by:
3.6.2.1.1.11
The maximum verify back door access key time is given by:
3.6.2.1.1.12
The maximum set user margin level time is given by:
3.6.2.1.1.13
The maximum set field margin level time is given by:
3.6.2.1.1.14
The time required to Erase Verify D-Flash for a given number of words N
3.6.2.1.1.15
D-Flash programming time is dependent on the number of words being programmed and their location with respect to a row
boundary, since programming across a row boundary requires extra steps. The D-Flash programming time is specified for
different cases: 1,2,3,4 words and 4 words across a row boundary.
The typical D-Flash programming time is given by the following equation, where N
row boundary is crossed and BC=1 if a row boundary is crossed:
Freescale Semiconductor
t
t
t
t
=
=
=
dcheck
t
t
pera
pera
t
400
350
350
uns







t
20020
20020
dpgm
------------------- -
f
------------------- -
f
------------------- -
f
100100

NVMBUS
NVMBUS
NVMBUS
450
Erase P-Flash Sector (FCMD=0x0A)
Unsecure Flash (FCMD=0x0B)
Verify Backdoor Access Key (FCMD=0x0C)
Set User Margin Level (FCMD=0x0D)
Set Field Margin Level (FCMD=0x0E)
Erase Verify D-Flash Section (FCMD=0x10)
Program D-Flash (FCMD=0x11)
1
1
1

+




---------------- -
f
---------------- -
f
N

NVMOP
NVMOP

14
---------------- -
f
W
NVMOP
1
1

+
1

------------------- -
f

NVMBUS
54 N
+
+
700
+
1
1400

38000
W


------------------- -
f

NVMBUS
------------------- -
f
+
NVMBUS


1
14 BC
------------------- -
f
1
NVMBUS
MM912_634 Advance Information, Rev. 4.0

1
 

---------------- -
f
NVMOP
1


+



500
W
+
is given by:

525 N

W
W
denotes the number of words; BC=0 if no

+

100 BC


Electrical Characteristics


------------------- -
f
NVMBUS
1


29