MM912H634CV1AE Freescale Semiconductor, MM912H634CV1AE Datasheet - Page 313

• Manufacturer Part Number: MM912H634CV1AE
• Description: 64KS12 LIN2xLS/HS Isense
• Manufacturer: Freescale Semiconductor
• Series: -r

Specifications of MM912H634CV1AE

• Applications: Automotive
• Core Processor: HCS12
• Program Memory Type: FLASH (64 kB)
• Controller Series: HCS12
• Ram Size: 6K x 8
• Interface: LIN
• Number Of I /o: -
• Voltage - Supply: 5.5 V ~ 27 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.40.4.3.5
Table 447
4.40.4.4
Only the operations marked ‘OK’ in
blocks. Some operations cannot be executed simultaneously because certain hardware resources are shared by the two
memories. The priority has been placed on permitting Program Flash reads while program and erase operations execute on the
Data Flash, providing read (P-Flash) while write (D-Flash) functionality.
Freescale Semiconductor
FCMD
FCMD
0x0C
0x0D
0x0B
0x0E
0x0D
0x0B
0x0E
0x01
0x02
0x08
0x09
0x10
0x11
0x12
summarizes the valid D-Flash commands along with the effects of the commands on the D-Flash block.
Margin Read
Program Flash
Sector Erase
Erase Verify All Blocks Verify that all D-Flash (and P-Flash) blocks are erased.
Set User Margin Level Specifies a user margin read level for all P-Flash blocks.
Set Field Margin Level Specifies a field margin read level for all P-Flash blocks (special modes only).
Set User Margin Level Specifies a user margin read level for the D-Flash block.
Set Field Margin Level Specifies a field margin read level for the D-Flash block (special modes only).
Erase D-Flash Sector Erase all bytes in a sector of the D-Flash block.
Erase Verify D-Flash
Program
Erase Verify Block
Erase Flash Block
Program D-Flash
Allowed Simultaneous P-Flash and D-Flash Operations
Erase All Blocks
Unsecure Flash
Verify Backdoor
Unsecure Flash
Read
D-Flash Commands
Access Key
Command
Command
Section
(215)
Table 448. Allowed P-Flash and D-Flash Simultaneous Operations
Read
Verify that the D-Flash block is erased.
Erase all D-Flash (and P-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN bits in the
FPROT register and the DPOPEN bit in the DFPROT register are set prior to launching the command.
Erase a D-Flash (or P-Flash) block.
An erase of the full D-Flash block is only possible when DPOPEN bit in the DFPROT register is set
prior to launching the command.
Supports a method of releasing MCU security by erasing all D-Flash (and P-Flash) blocks and
verifying that all D-Flash (and P-Flash) blocks are erased.
Verify that a given number of words starting at the address provided are erased.
Program up to four words in the D-Flash block.
Supports a method of releasing MCU security by erasing all P-Flash (and D-Flash) blocks and
verifying that all P-Flash (and D-Flash) blocks are erased.
Supports a method of releasing MCU security by verifying a set of security keys.
Table 448
MM912_634 Advance Information, Rev. 4.0
are permitted to be run simultaneously on the Program Flash and Data Flash
Margin Read
Table 447. D-Flash Commands
Table 446. P-Flash Commands
OK
OK
(216)
(215)
Function on D-Flash Memory
Function on P-Flash Memory
Data Flash
Program
OK
Sector Erase
OK
OK
Mass Erase
(217)
313