MM912H634CV1AE Freescale Semiconductor, MM912H634CV1AE Datasheet - Page 295

• Manufacturer Part Number: MM912H634CV1AE
• Description: 64KS12 LIN2xLS/HS Isense
• Manufacturer: Freescale Semiconductor
• Series: -r

Specifications of MM912H634CV1AE

• Applications: Automotive
• Core Processor: HCS12
• Program Memory Type: FLASH (64 kB)
• Controller Series: HCS12
• Ram Size: 6K x 8
• Interface: LIN
• Number Of I /o: -
• Voltage - Supply: 5.5 V ~ 27 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.40.1.2.3
4.40.1.3
The block diagram of the Flash module is shown in .
4.40.2
The Flash module contains no signals that connect off-chip.
4.40.3
This section describes the memory map and registers for the Flash module. Read data from unimplemented memory space in
the Flash module is undefined. Write access to unimplemented or reserved memory space in the Flash module will be ignored
by the Flash module.
4.40.3.1
The S12 architecture places the P-Flash memory between global addresses .The P-Flash memory map is shown in .
The FPROT register, described in
or erase. The Flash memory addresses covered by these protectable regions are shown in the P-Flash memory map. The higher
address region is mainly targeted to hold the boot loader code since it covers the vector space. Default protection settings as well
as security information that allows the MCU to restrict access to the Flash module are stored in the Flash configuration field as
described in
Freescale Semiconductor
Note:
201.
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•
•
•
•
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0x3_FF08-0x3_FF0B
0x3_FF00-0x3_FF07
Global Address
0x3FF08-0x3_FF0F form a Flash phrase and must be programmed in a single command write sequence. Each byte in the 0x3_FF08
- 0x3_FF0B reserved field should be programmed to 0xFF.
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of D-Flash memory
Ability to program up to four words in a burst sequence
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
0x3_FF0C
0x3_FF0D
0x3_FF0E
0x3_FF0F
Table
External Signal Description
Memory Map and Registers
Block Diagram
Module Memory Map
Other Flash Module Features
404.
Size (Bytes)
Section
8
4
1
1
1
1
4.40.3.2.9, can be set to protect regions in the Flash memory from accidental program
Table 404. Flash Configuration Field
MM912_634 Advance Information, Rev. 4.0
Backdoor Comparison Key
Refer to
Section 4.40.5.1, “Unsecuring the MCU using Backdoor Key
Reserved
P-Flash Protection byte
Refer to
D-Flash Protection byte
Refer to
Flash Nonvolatile byte
Refer to
Flash Security byte
Refer to
Section 4.40.4.5.11, “Verify Backdoor Access Key
Section 4.40.3.2.9, “P-Flash Protection Register (FPROT)”
Section 4.40.3.2.10, “D-Flash Protection Register (DFPROT)”
Section 4.40.3.2.16, “Flash Option Register (FOPT)”
Section 4.40.3.2.2, “Flash Security Register (FSEC)”
.
.
Description
Command,” and
Access”
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