SAM9G10 Atmel Corporation, SAM9G10 Datasheet - Page 302

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SAM9G10

Manufacturer Part Number
SAM9G10
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9G10

Flash (kbytes)
0 Kbytes
Pin Count
217
Max. Operating Frequency
266 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
1
Uart
4
Ssc
3
Sd / Emmc
1
Graphic Lcd
Yes
Video Decoder
No
Camera Interface
No
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
16
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.08 to 1.32
Fpu
No
Mpu / Mmu
No/Yes
Timers
3
Output Compare Channels
3
Input Capture Channels
3
32khz Rtc
Yes
Calibrated Rc Oscillator
No
25.5.3.4
302
302
SAM9G35
SAM9G35
Power supplies
and
The product embeds a dual power supply for EBI. VDDNF for NAND Flash signals and VDDIOM
for others. This allows to use an 1.8V or 3.3V NAND Flash independently of SDRAM power
supply.
A switch, NFD0_ON_D16, enables the user to select NAND Flash path on D0-D15 or D16-D32
depending on memory power supplies. This switch is located in the register EBICSA in the Bus
Matrix user interface.
In the following example the NAND Flash and the external RAM (DDR2 or LP-DDR or 16-bit LP-
SDR) are in the same power supply range, (NFD0_ON_D16 = default).
– A[14] <=> DELAY6[27:24]
– A[15] <=> DELAY6[31:28]
– A[16] <=> DELAY7[3:0]
– A[17] <=> DELAY7[7:4]
– A[18] <=> DELAY7[11:8]
– A19 <=> DELAY7[15:12]
– A21 <=> PD[2] <=> DELAY7[23:20]
– A22 <=> PD[3] <=> DELAY7[27:24]
EBI
EBI
D[31:16]
D[15:0]
D[15:0]
A[22:21]
A[22:21]
D[31:16]
16-bit LP-SDR (1.8V)
D[15:0]
ALE
CLE
D[15:0]
ALE
CLE
D[15:0]
D[15:0]
32bit SDRAM (3.3V)
NAND Flash (1.8V)
NAND Flash (3.3V)
LP-DDR or
DDR2 or
11053B–ATARM–22-Sep-11
11053B–ATARM–22-Sep-11

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