ATXMEGA256A3B-MH Atmel, ATXMEGA256A3B-MH Datasheet - Page 365

MCU AVR 256KB FLASH A3B 64-QFN

ATXMEGA256A3B-MH

Manufacturer Part Number
ATXMEGA256A3B-MH
Description
MCU AVR 256KB FLASH A3B 64-QFN
Manufacturer
Atmel
Series
AVR® XMEGAr
Datasheets

Specifications of ATXMEGA256A3B-MH

Core Processor
AVR
Core Size
8/16-Bit
Speed
32MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
49
Program Memory Size
256KB (128K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.6 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-MLF®, 64-QFN
Processor Series
ATXMEGA256x
Core
AVR8
Data Bus Width
8 bit, 16 bit
Data Ram Size
16 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
49
Number Of Timers
7
Operating Supply Voltage
1.6 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 8 Channel
On-chip Dac
12 bit, 2 Channel
For Use With
ATAVRONEKIT - KIT AVR/AVR32 DEBUGGER/PROGRMMRATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ATXMEGA256A3B-MU
ATXMEGA256A3B-MU

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATXMEGA256A3B-MH
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
30.7
30.7.1
30.7.2
8077H–AVR–12/09
Flash and EEPROM Programming Sequences
Flash Programming Sequence
EEPROM programming sequence
The EEPROM Page Buffer is automatically erased after:
For Flash and EEPROM page programming, filling the page buffers and writing the page buffer
into Flash or EEPROM is two separate operations. The sequence of this is the same for both
self-programming and external programming.
Before programming a Flash page with the data in the Flash page buffer, the Flash page must
be erased. Programming an un-erased flash Page will corrupt the content in the flash Page.
The flash page buffer can be filled either before the Erase Flash Page operation or between a
Erase Flash Page and a Write Flash Page operation:
Alternative 1, fill the buffer before a split Page Erase and Page Write:
Alternative 2, fill the page buffer before an atomic Page Erase and Write:
Alternative 3, fill the buffer after a Page Erase:
The NVM command set supports both atomic erase and write operations, and split page erase
and page write commands. This split commands enables shorter programming time for each
command and the erase operations can be done during non-time-critical programming execu-
tion. When using alternative 1 or 2 above for self-programming, the Boot Loader provides an
effective Read-Modify-Write feature, which allows the software to first read the page, do the nec-
essary changes, and then write back the modified data. If alternative 3 is used, it is not possible
to read the old data while loading, since the page is already erased. The page address must be
the same for both Page Erase and Page Write operations when using alternative 1 or 3.
Before programming an EEPROM page with the selected number of data bytes stored in the
EEPROM page buffer, the selected locations in the EEPROM page must be erased. Program-
ming an un-erased EEPROM page will corrupt the content in the EEPROM page. The EEPROM
page buffer must be loaded before any Page Erase or Page Write operations:
Alternative 1, fill the page buffer before a Page Erase:
• A system reset.
• Executing the Write EEPROM Page command.
• Executing the Erase and Write EEPROM Page command.
• Executing the Write Lock Bit and Write Fuse commands
• Fill the Flash Page Buffer.
• Perform a Flash Page Erase.
• Perform a Flash Page Write.
• Fill the Flash Page Buffer.
• Perform a Page Erase and Write.
• Perform a Flash Page Erase.
• Fill the Flash Page Buffer.
• Perform a Flash Page Write.
• Fill the EEPROM page buffer with the selected number of bytes.
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