r5f21368sdfp Renesas Electronics Corporation., r5f21368sdfp Datasheet - Page 700

• Manufacturer Part Number: r5f21368sdfp
• Description: Renesas Mcu R8c Family / R8c/3xt-a Series
• Manufacturer: Renesas Electronics Corporation.

Under development
R8C/36T-A Group
R01UH0240EJ0001 Rev.0.01
Apr 28, 2011
Table 28.6
Notes:
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-READY)
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d(SR-SUS)
d(CMDRST
Symbol
1. Definition of programming/erasure endurance
2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
7. The data hold time includes 3,000 hours under the environment of ambient temperature 125°C and 7,000 hours under the
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100, 1,000 or 10,000), each block can be erased n times. For example, if
1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
environment of ambient temperature 85°C.
Program/erase endurance
Byte program time
(Program and erase endurance  1,000
times)
Byte program time
(Program and erase endurance > 1,000
times)
Block erase time
(Program and erase endurance  1,000
times)
Block erase time
(Program and erase endurance > 1,000
times)
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Time from suspend until erase restart
Time from when command is forcibly
terminated until reading is enabled
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Preliminary document
Specifications in this document are tentative and subject to change.
Flash Memory (Data flash Block A to Block D) Characteristics
(Vcc = 2.7 V to 5.5 V, Topr =  20°C to 85°C (N version)/  40°C to 85°C (D version),
unless otherwise specified)
Parameter
(6)
(1)
Ambient temperature
= 55°C
Conditions
(7)
TBD
TBD
TBD
TBD
TBD
Min.
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0
(2)
Typ.
160
300
0.2
0.3
Standard
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28. Electrical Characteristics
Max.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
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Page 669 of 725
times
year
Unit
ms
μs
μs
μs
μs
μs
°C
V
V
s
s