D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 191

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Bit
12
11
10
9
8
Bit Name
CAST
RMTS2
RMTS1
RMTS0
Initial Value
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
Description
Column Address Output Cycle Number Select
Selects whether the column address output
cycle in DRAM access comprises 3 states or 2
states. The setting of this bit applies to all areas
designated as DRAM space.
0: 2 states
1: 3 states
Reserved
This bit can be read from or written to.
However, the write value should always be 0.
DRAM/Continuous Synchronous DRAM Space
Select
These bits designate DRAM/continuous
synchronous DRAM space for areas 2 to 5.
When continuous DRAM space is set, it is
possible to connect large-capacity DRAM
exceeding 2 Mbytes per area. In this case, the
RAS signal is output from the CS2 pin.
When continuous synchronous DRAM space is
set, it is possible to connect large-capacity
synchronous DRAM exceeding 2 Mbytes per
area. In this case, the RAS, CAS, and WE
signals are output from CS2, CS3, and CS4
pins, respectively. When synchronous DRAM
mode is set, the mode registers of the
synchronous DRAM can be set.
000: Normal space
001: Normal space in areas 3 to 5
010: Normal space in areas 4 and 5
011: DRAM space in areas 2 to 5
100: Continuous synchronous DRAM space
101: Synchronous DRAM mode setting (setting
110: Setting prohibited
111: Continuous DRAM space in areas 2 to 5
DRAM space in area 2
DRAM space in areas 2 and 3
(setting prohibited in the H8S/2678 Group)
prohibited in the H8S/2678 Group)
Rev. 3.00 Mar 17, 2006 page 139 of 926
Section 6 Bus Controller (BSC)
REJ09B0283-0300

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