D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 273

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

When using self-refresh mode, the OPE bit must not be cleared to 0 in SBYCR.
In some synchronous DRAMs provided with a self-refresh mode, the interval between clearing
self-refreshing and the next command is specified. A setting can be made in bits TPCS2 to TPCS0
in REFCR to make the precharge time after self-refreshing from 1 to 7 states longer than the
normal precharge time. In this case, too, normal precharging is performed according to the setting
of bits TPC1 and TPC0 in DRACCR, and therefore a setting should be made to give the optimum
post-self-refresh precharge time, including this time. Figure 6.58 shows an example of the timing
when the precharge time after self-refreshing is extended by 2 states.
Precharge-sel
Address bus
SDRAM
CAS
RAS
CKE
WE
(TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0, RLW1 = 0, RLW0 = 0)
PALL
T
Rp
SELF
Figure 6.57 Self-Refresh Timing
T
Rr
Rev. 3.00 Mar 17, 2006 page 221 of 926
Software standby
NOP
Section 6 Bus Controller (BSC)
REJ09B0283-0300
T
Rc2